JOURNAL ARTICLE
Electron transport through the MOCVD grown GaAs/AlGaAs/GaAs heterojunction barrier
I. HaseH. KawaiK. KanekoN. Watanabe
Year: 1984 Journal: Electronics Letters Vol: 20 (12)Pages: 491-492 Publisher: Institution of Engineering and Technology
Abstract
We investigated the current/voltage characteristics of n+GaAs/undoped AlxGa1−xAs (200 A)/n+GaAs heterostructures grown by the metalorganic chemical vapour deposition (MOCVD) method between 77 K and 300 K. Both the voltage dependence and the temperature dependence of the current were in good agreement over a wide current range with the calculated results of the tunnelling and thermionic emission current.
Keywords:
Metalorganic vapour phase epitaxy Heterojunction Thermionic emission Quantum tunnelling Chemical vapor deposition Optoelectronics Materials science Gallium arsenide Current (fluid) Atmospheric temperature range Electron Condensed matter physics Chemistry Electrical engineering Epitaxy Nanotechnology Physics Layer (electronics)
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15
Cited By
1.33
FWCI (Field Weighted Citation Impact)
0
Refs
0.78
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Citation History
Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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