Film-thickness dependence of structural and electrical properties of boron-doped hydrogenated microcrystalline silicon prepared by radiofrequency magnetron sputtering

Akimori Tabata; Junya Nakano; Koji Mazaki; Kota Fukaya

doi:10.1016/j.jnoncrysol.2010.04.011

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Film-thickness dependence of structural and electrical properties of boron-doped hydrogenated microcrystalline silicon prepared by radiofrequency magnetron sputtering

Akimori Tabata Junya Nakano Koji Mazaki Kota Fukaya

Year: 2010 Journal: Journal of Non-Crystalline Solids Vol: 356 (23-24)Pages: 1131-1134 Publisher: Elsevier BV

DOI: 10.1016/j.jnoncrysol.2010.04.011

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Keywords:

Materials science Microcrystalline Doping Sputter deposition Silicon Boron Optoelectronics Cavity magnetron Microcrystalline silicon Sputtering Thin film Nanotechnology Crystallography Chemistry Crystalline silicon

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Film-thickness dependence of structural and electrical properties of boron-doped hydrogenated microcrystalline silicon prepared by radiofrequency magnetron sputtering

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