Electrical properties of boron- and phosphorous-doped microcrystalline silicon thin films prepared by magnetron sputtering of heavily doped silicon targets

Weiyan Wang; Jinhua Huang; Wei Xu; Junjun Huang; Yuheng Zeng; Weijie Song

doi:10.1007/s10854-013-1068-7

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Electrical properties of boron- and phosphorous-doped microcrystalline silicon thin films prepared by magnetron sputtering of heavily doped silicon targets

Weiyan Wang Jinhua Huang Wei Xu Junjun Huang Yuheng Zeng Weijie Song

Year: 2013 Journal: Journal of Materials Science Materials in Electronics Vol: 24 (6)Pages: 2122-2127 Publisher: Springer Science+Business Media

DOI: 10.1007/s10854-013-1068-7

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Keywords:

Materials science Doping Microcrystalline Sputter deposition Silicon Thin film Electrical resistivity and conductivity Boron Analytical Chemistry (journal) Annealing (glass) Sputtering Mineralogy Optoelectronics Nanotechnology Metallurgy Crystallography Chemistry Electrical engineering

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Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Electrical properties of boron- and phosphorous-doped microcrystalline silicon thin films prepared by magnetron sputtering of heavily doped silicon targets

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