Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111)

JOURNAL ARTICLE

Year: 2008 Journal: Journal of Crystal Growth Vol: 311 (4)Pages: 1070-1079 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2008.12.034

Keywords:

Materials science Crystallography Dislocation Kinetics Growth rate Analytical Chemistry (journal) Chemistry Mathematics Physics Geometry

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