Carbon-Incorporated Amorphous Indium Zinc Oxide Thin-Film Transistors

S. Parthiban; K. Park; Hyung Jun Kim; Se-Hoon Yang; Jang‐Yeon Kwon

doi:10.1007/s11664-014-3333-9

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JOURNAL ARTICLE

Carbon-Incorporated Amorphous Indium Zinc Oxide Thin-Film Transistors

S. Parthiban K. Park Hyung Jun Kim Se-Hoon Yang Jang‐Yeon Kwon

Year: 2014 Journal: Journal of Electronic Materials Vol: 43 (11)Pages: 4224-4228 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-014-3333-9

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Keywords:

Thin-film transistor Materials science Amorphous solid Thin film Transmission electron microscopy Annealing (glass) Sputtering Indium Amorphous carbon Sputter deposition Zinc Oxide thin-film transistor Chemical engineering Optoelectronics Nanotechnology Metallurgy Chemistry Crystallography Layer (electronics)

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Carbon-Incorporated Amorphous Indium Zinc Oxide Thin-Film Transistors

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