Zinc oxide incorporated indium tungsten oxide amorphous thin films for thin film transistors applications

Ram Narayan Chauhan; Nidhi Tiwari

doi:10.1016/j.jnoncrysol.2020.120556

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Zinc oxide incorporated indium tungsten oxide amorphous thin films for thin film transistors applications

Ram Narayan Chauhan Nidhi Tiwari

Year: 2020 Journal: Journal of Non-Crystalline Solids Vol: 556 Pages: 120556-120556 Publisher: Elsevier BV

DOI: 10.1016/j.jnoncrysol.2020.120556

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Keywords:

Materials science Thin-film transistor Amorphous solid Threshold voltage Indium Thin film Tungsten Sputter deposition Optoelectronics Zinc Oxide Sputtering Equivalent oxide thickness Transistor Nanotechnology Metallurgy Gate oxide Electrical engineering Voltage Layer (electronics) Chemistry Crystallography

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Zinc oxide incorporated indium tungsten oxide amorphous thin films for thin film transistors applications

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