Amorphous Hafnium‐Indium‐Zinc Oxide Semiconductor Thin Film Transistors

Abstract

We reported on the performance and electrical properties of co‐sputtering‐processed amorphous hafnium‐indium‐zinc oxide ( α ‐HfIZO) thin film transistors (TFTs). Co‐sputtering‐processed α ‐HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co‐sputtering power. Additionally, the chemical composition of α ‐HfIZO had a significant effect on reliability, hysteresis, field‐effect mobility ( μ FE), carrier concentration, and subthreshold swing (S) of the device. Our results indicated that we could successfully and easily fabricate α ‐HfIZO TFTs with excellent performance by the co‐sputtering process. Co‐sputtering‐processed α ‐HfIZO TFTs were fabricated with an on/off current ratio of ~ 10 6 , higher mobility, and a subthreshold slope as steep as 0.55 V/dec.