Quantitative infrared characterization of plasma enhanced CVD silicon oxynitride films

J. C. Rostaing; Y. Cros; S. C. Gujrathi; Samuel Poulain

doi:10.1016/0022-3093(87)90252-3

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Quantitative infrared characterization of plasma enhanced CVD silicon oxynitride films

J. C. Rostaing Y. Cros S. C. Gujrathi Samuel Poulain

Year: 1987 Journal: Journal of Non-Crystalline Solids Vol: 97-98 Pages: 1051-1054 Publisher: Elsevier BV

DOI: 10.1016/0022-3093(87)90252-3

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Keywords:

Silicon oxynitride Plasma-enhanced chemical vapor deposition Materials science Silicon Characterization (materials science) Plasma Infrared Calibration Absorption (acoustics) Infrared spectroscopy Analytical Chemistry (journal) Chemical engineering Optoelectronics Nanotechnology Chemistry Optics Silicon nitride Environmental chemistry Composite material Physics Organic chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantitative infrared characterization of plasma enhanced CVD silicon oxynitride films

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