Plasma-enhanced deposition of silicon oxynitride films

J.E. Schoenholtz; Dennis W. Hess

doi:10.1016/0040-6090(87)90322-1

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Plasma-enhanced deposition of silicon oxynitride films

J.E. Schoenholtz Dennis W. Hess

Year: 1987 Journal: Thin Solid Films Vol: 148 (3)Pages: 285-291 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(87)90322-1

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Keywords:

Silicon oxynitride Rutherford backscattering spectrometry Chemical vapor deposition Analytical Chemistry (journal) Deposition (geology) Silicon Nitrogen Refractive index Plasma-enhanced chemical vapor deposition Oxygen Materials science Hydrogen Thin film Chemistry Nanotechnology Silicon nitride Environmental chemistry Metallurgy Optoelectronics

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Plasma-enhanced deposition of silicon oxynitride films

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