Reactive ion etching for patterning high aspect ratio and nanoscale features

Abstract

This paper presents the authors' understanding of the mechanistic aspects of the role of energetic ion bombardment in low density plasma reactive ion etching (RIE). The phenomenon of ion assisted gas surface chemistry is described and the importance of this phenomenon in obtaining anisotropic is emphasized. It was studied the dependence of etching rate of RF power and pressure in reactor. RF power and pressure in the reactor has significant effect not only on the etching rate, but also on the degree of anisotropy and etching profiles for various RF power and pressure in the reactor.