JOURNAL ARTICLE
Cross-sectional scanning tunneling microscopy of MBE-grown Si p-n junctions and Si/SiGe superlattices
Edward T. YuMatthew B. JohnsonV. P. KesanAdrian R. PowellJ.-M. HalboutSubramanian S. Iyer
Year: 1993 Journal: Journal of Crystal Growth Vol: 127 (1-4)Pages: 435-439 Publisher: Elsevier BV
Keywords:
Scanning tunneling microscope Superlattice Materials science Molecular beam epitaxy Microscopy Semiconductor materials Silicon Optoelectronics Crystallography Chemistry Nanotechnology Epitaxy Semiconductor Optics Layer (electronics) Physics
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4
Cited By
0.46
FWCI (Field Weighted Citation Impact)
18
Refs
0.57
Citation Normalized Percentile
Is in top 1%
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Citation History
Topics
Surface and Thin Film Phenomena
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Force Microscopy Techniques and Applications
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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