Solubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy

P. D. Kirchner; A. Vaterlaus; R. M. Feenstra; Chi-lieh Lin; G. D. Pettit; J. M. Woodall

doi:10.1016/0022-0248(93)90783-s

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Solubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy

P. D. Kirchner A. Vaterlaus R. M. Feenstra Chi-lieh Lin G. D. Pettit J. M. Woodall

Year: 1993 Journal: Journal of Crystal Growth Vol: 127 (1-4)Pages: 1030-1031 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(93)90783-s

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Keywords:

Scanning tunneling microscope Doping Materials science Quantum tunnelling Microscopy Optoelectronics Chemistry Analytical Chemistry (journal) Nanotechnology Optics Physics

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Solubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy

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