MBE grown Si/SiGe undulating layer superlattices for infrared light detection

Stephan Winnerl; Dan Buca; St. Lenk; Ch. Buchal; S. Mantl; Dan‐Xia Xu

doi:10.1016/s0921-5107(01)00760-7

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MBE grown Si/SiGe undulating layer superlattices for infrared light detection

Stephan Winnerl Dan Buca St. Lenk Ch. Buchal S. Mantl Dan‐Xia Xu

Year: 2002 Journal: Materials Science and Engineering B Vol: 89 (1-3)Pages: 73-76 Publisher: Elsevier BV

DOI: 10.1016/s0921-5107(01)00760-7

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Keywords:

Superlattice Molecular beam epitaxy Materials science Optoelectronics Transmission electron microscopy Germanium Layer (electronics) Infrared Semiconductor Detector Epitaxy Wavelength Optics Silicon Nanotechnology Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

MBE grown Si/SiGe undulating layer superlattices for infrared light detection

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