JOURNAL ARTICLE

MBE grown Si/SiGe undulating layer superlattices for infrared light detection

Stephan WinnerlDan BucaSt. LenkCh. BuchalS. MantlDan‐Xia Xu

Year: 2002 Journal:   Materials Science and Engineering B Vol: 89 (1-3)Pages: 73-76   Publisher: Elsevier BV
Keywords:
Superlattice Molecular beam epitaxy Materials science Optoelectronics Transmission electron microscopy Germanium Layer (electronics) Infrared Semiconductor Detector Epitaxy Wavelength Optics Silicon Nanotechnology Physics

Metrics

11
Cited By
1.26
FWCI (Field Weighted Citation Impact)
15
Refs
0.80
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Nanowire Synthesis and Applications
Physical Sciences →  Engineering →  Biomedical Engineering
Silicon Nanostructures and Photoluminescence
Physical Sciences →  Materials Science →  Materials Chemistry

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