Electrical and optical properties of TiO2-doped ZnO films prepared by radio-frequency magnetron sputtering

Jeng-Lin Chung; Jyh-Chen Chen; Chung‐Jen Tseng

doi:10.1016/j.jpcs.2007.07.040

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Electrical and optical properties of TiO2-doped ZnO films prepared by radio-frequency magnetron sputtering

Jeng-Lin Chung Jyh-Chen Chen Chung‐Jen Tseng

Year: 2007 Journal: Journal of Physics and Chemistry of Solids Vol: 69 (2-3)Pages: 535-539 Publisher: Elsevier BV

DOI: 10.1016/j.jpcs.2007.07.040

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Keywords:

Materials science Amorphous solid Doping Sputter deposition Electrical resistivity and conductivity Band gap Transmittance Sputtering Argon Cavity magnetron Analytical Chemistry (journal) Optoelectronics Thin film Nanotechnology Chemistry

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Electrical and optical properties of TiO2-doped ZnO films prepared by radio-frequency magnetron sputtering

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