Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application

Hsueh-Chih Tseng; Ting‐Chang Chang; Jheng-Jie Huang; Yuting Chen; Po‐Chun Yang; Hui‐Chun Huang; Dershin Gan; New‐Jin Ho; Simon M. Sze; Ming‐Jinn Tsai

doi:10.1016/j.tsf.2011.07.026

JOURNAL ARTICLE

Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application

Hsueh-Chih Tseng Ting‐Chang Chang Jheng-Jie Huang Yuting Chen Po‐Chun Yang Hui‐Chun Huang Dershin Gan New‐Jin Ho Simon M. Sze Ming‐Jinn Tsai

Year: 2011 Journal: Thin Solid Films Vol: 520 (5)Pages: 1656-1659 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2011.07.026

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Keywords:

Ytterbium Materials science Non-volatile memory Thin film Oxide Optoelectronics Resistive touchscreen Nanotechnology Electrical engineering Doping Metallurgy Engineering

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application

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