JOURNAL ARTICLE

Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices

Hongjun WangChangwei ZouLin ZhouCanxin TianDejun Fu

Year: 2011 Journal:   Microelectronic Engineering Vol: 91 Pages: 144-146   Publisher: Elsevier BV
Keywords:
Non-blocking I/O Materials science Resistive random-access memory Optoelectronics Sputter deposition Substrate (aquarium) FOIL method Electrode Thin film Resistive touchscreen Deposition (geology) Layer (electronics) Sputtering Nanotechnology Composite material Electrical engineering Chemistry

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39
Cited By
2.84
FWCI (Field Weighted Citation Impact)
12
Refs
0.92
Citation Normalized Percentile
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Is in top 10%

Citation History

Topics

Advanced Memory and Neural Computing
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Transition Metal Oxide Nanomaterials
Physical Sciences →  Materials Science →  Polymers and Plastics
Ferroelectric and Negative Capacitance Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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