Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices

Hongjun Wang; Changwei Zou; Lin Zhou; Canxin Tian; Dejun Fu

doi:10.1016/j.mee.2011.05.037

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Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices

Hongjun Wang Changwei Zou Lin Zhou Canxin Tian Dejun Fu

Year: 2011 Journal: Microelectronic Engineering Vol: 91 Pages: 144-146 Publisher: Elsevier BV

DOI: 10.1016/j.mee.2011.05.037

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Keywords:

Non-blocking I/O Materials science Resistive random-access memory Optoelectronics Sputter deposition Substrate (aquarium) FOIL method Electrode Thin film Resistive touchscreen Deposition (geology) Layer (electronics) Sputtering Nanotechnology Composite material Electrical engineering Chemistry

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices

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