Inductively coupled plasma etching of GaN using Cl2/He gases

Yen-Sheng Lin; S.J. Chang; Yan‐Kuin Su; Shih Chang Shei; Se‐Yei Hsu

doi:10.1016/s0921-5107(02)00756-0

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Inductively coupled plasma etching of GaN using Cl2/He gases

Yen-Sheng Lin S.J. Chang Yan‐Kuin Su Shih Chang Shei Se‐Yei Hsu

Year: 2003 Journal: Materials Science and Engineering B Vol: 98 (1)Pages: 60-64 Publisher: Elsevier BV

DOI: 10.1016/s0921-5107(02)00756-0

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Keywords:

Inductively coupled plasma Etching (microfabrication) Plasma Materials science Analytical Chemistry (journal) Contact resistance Plasma etching Dry etching Argon Chamber pressure Reactive-ion etching Chemistry Optoelectronics Nanotechnology Layer (electronics) Metallurgy Chromatography

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Inductively coupled plasma etching of GaN using Cl2/He gases

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