JOURNAL ARTICLE

Inductively coupled plasma etching of GaN using Cl2/He gases

Yen-Sheng LinS.J. ChangYan‐Kuin SuShih Chang SheiSe‐Yei Hsu

Year: 2003 Journal:   Materials Science and Engineering B Vol: 98 (1)Pages: 60-64   Publisher: Elsevier BV
Keywords:
Inductively coupled plasma Etching (microfabrication) Plasma Materials science Analytical Chemistry (journal) Contact resistance Plasma etching Dry etching Argon Chamber pressure Reactive-ion etching Chemistry Optoelectronics Nanotechnology Layer (electronics) Metallurgy Chromatography

Metrics

19
Cited By
1.41
FWCI (Field Weighted Citation Impact)
7
Refs
0.81
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry

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