High-rate Ru electrode etching using O2/Cl2 inductively coupled plasma

Hyoun Woo Kim; Byong-Sun Ju; Chang-Jin Kang

doi:10.1016/s0167-9317(02)00962-0

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High-rate Ru electrode etching using O2/Cl2 inductively coupled plasma

Hyoun Woo Kim Byong-Sun Ju Chang-Jin Kang

Year: 2003 Journal: Microelectronic Engineering Vol: 65 (3)Pages: 319-326 Publisher: Elsevier BV

DOI: 10.1016/s0167-9317(02)00962-0

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Keywords:

Inductively coupled plasma Electrode Etching (microfabrication) Plasma Inductively coupled plasma mass spectrometry Analytical Chemistry (journal) Plasma etching Reactive-ion etching Materials science Inductively coupled plasma atomic emission spectroscopy Chemistry Nanotechnology Environmental chemistry Mass spectrometry Chromatography Physical chemistry Physics

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Acoustic Wave Resonator Technologies

Physical Sciences → Engineering → Biomedical Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

High-rate Ru electrode etching using O2/Cl2 inductively coupled plasma

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