Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane

H. K. E. Latha; A. Udayakumar; Virendra Prasad

doi:10.1016/j.mssp.2013.12.017

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Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane

H. K. E. Latha A. Udayakumar Virendra Prasad

Year: 2014 Journal: Materials Science in Semiconductor Processing Vol: 29 Pages: 117-123 Publisher: Elsevier BV

DOI: 10.1016/j.mssp.2013.12.017

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Keywords:

Materials science Thin film Crystallinity Analytical Chemistry (journal) Microstructure Fourier transform infrared spectroscopy Chemical vapor deposition Dopant Doping Nitrogen Sheet resistance Chemical engineering Composite material Nanotechnology Optoelectronics Layer (electronics) Organic chemistry Chemistry

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane

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