JOURNAL ARTICLE

Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane

H. K. E. LathaA. UdayakumarVirendra Prasad

Year: 2014 Journal:   Materials Science in Semiconductor Processing Vol: 29 Pages: 117-123   Publisher: Elsevier BV
Keywords:
Materials science Thin film Crystallinity Analytical Chemistry (journal) Microstructure Fourier transform infrared spectroscopy Chemical vapor deposition Dopant Doping Nitrogen Sheet resistance Chemical engineering Composite material Nanotechnology Optoelectronics Layer (electronics) Organic chemistry Chemistry

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14
Cited By
0.74
FWCI (Field Weighted Citation Impact)
30
Refs
0.76
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Silicon Carbide Semiconductor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Copper Interconnects and Reliability
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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