JOURNAL ARTICLE
Electrical Characteristics of In-Situ-Doped Polycrystalline 3C-SiC Thin Films Deposited by Using CVD
Year: 2008 Journal: Journal of the Korean Physical Society Vol: 53 (2)Pages: 822-825 Publisher: Springer Science+Business Media
Keywords:
Materials science In situ Thin film Crystallite Doping Optoelectronics Chemical vapor deposition Nanotechnology Metallurgy
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9
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1.43
FWCI (Field Weighted Citation Impact)
0
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0.84
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Citation History
Topics
Silicon Carbide Semiconductor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Copper Interconnects and Reliability
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
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