JOURNAL ARTICLE

Electrical Characteristics of In-Situ-Doped Polycrystalline 3C-SiC Thin Films Deposited by Using CVD

Kang-San KimGwiy‐Sang Chung

Year: 2008 Journal:   Journal of the Korean Physical Society Vol: 53 (2)Pages: 822-825   Publisher: Springer Science+Business Media
Keywords:
Materials science In situ Thin film Crystallite Doping Optoelectronics Chemical vapor deposition Nanotechnology Metallurgy

Metrics

9
Cited By
1.43
FWCI (Field Weighted Citation Impact)
0
Refs
0.84
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Silicon Carbide Semiconductor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Copper Interconnects and Reliability
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials

Related Documents

JOURNAL ARTICLE

Electrical Characteristics of Polycrystalline 3C-SiC Thin Films

Jeong-Hak AhnGwiy‐Sang Chung

Journal:   International Siberian workshops and tutorials on electron devices and materials Year: 2007 Vol: 23 Pages: 32-33
JOURNAL ARTICLE

Mechanical Properties of in-situ Doped Polycrystalline 3C-SiC Thin Films by APCVD

Kang-San Kim

Journal:   Journal of the Korean Institute of Electrical and Electronic Material Engineers Year: 2009 Vol: 22 (3)Pages: 235-238
JOURNAL ARTICLE

Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane

H. K. E. LathaA. UdayakumarVirendra Prasad

Journal:   Materials Science in Semiconductor Processing Year: 2014 Vol: 29 Pages: 117-123
© 2026 ScienceGate Book Chapters — All rights reserved.