Electrical properties of ZnO thin films grown by MOCVD

O. Pagni; Nomabali Nelisiwe Somhlahlo; Caroline Weichsel; A.W.R. Leitch

doi:10.1016/j.physb.2005.12.187

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Electrical properties of ZnO thin films grown by MOCVD

O. Pagni Nomabali Nelisiwe Somhlahlo Caroline Weichsel A.W.R. Leitch

Year: 2006 Journal: Physica B Condensed Matter Vol: 376-377 Pages: 749-751 Publisher: Elsevier BV

DOI: 10.1016/j.physb.2005.12.187

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Keywords:

Metalorganic vapour phase epitaxy Sapphire Materials science Electrical resistivity and conductivity Layer (electronics) Thin film Hall effect Characterization (materials science) Oxygen Scattering Activation energy Chemical vapor deposition Conductivity Optoelectronics Chemical engineering Analytical Chemistry (journal) Chemistry Composite material Epitaxy Nanotechnology Optics Physical chemistry

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper-based nanomaterials and applications

Physical Sciences → Materials Science → Materials Chemistry

Electrical properties of ZnO thin films grown by MOCVD

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