JOURNAL ARTICLE

Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD

Hwa-Mok KimTae-Won Kang

Year: 2001 Journal:   Materials Letters Vol: 48 (5)Pages: 263-268   Publisher: Elsevier BV
Keywords:
Cathodoluminescence Materials science Metalorganic vapour phase epitaxy Quantum well Optoelectronics Nanotechnology Luminescence Epitaxy Optics Laser Layer (electronics)

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Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
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