Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD

Hwa-Mok Kim; Tae-Won Kang

doi:10.1016/s0167-577x(00)00313-x

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Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD

Hwa-Mok Kim Tae-Won Kang

Year: 2001 Journal: Materials Letters Vol: 48 (5)Pages: 263-268 Publisher: Elsevier BV

DOI: 10.1016/s0167-577x(00)00313-x

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Keywords:

Cathodoluminescence Materials science Metalorganic vapour phase epitaxy Quantum well Optoelectronics Nanotechnology Luminescence Epitaxy Optics Laser Layer (electronics)

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD

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