Multiple Wavelength Emission From Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD

Hongbo Yu; Taeil Jung; Ling Kai Lee; C. C. Kuo

doi:10.1109/qels.2007.4431327

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Multiple Wavelength Emission From Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD

Hongbo Yu Taeil Jung Ling Kai Lee C. C. Kuo

Year: 2007 Pages: 1-2

DOI: 10.1109/qels.2007.4431327

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Abstract

Multiple wavelength emission is experimentally observed from semipolar InGaN/GaN quantum wells selectively grown by MOCVD. Selective growth rates on different mask opening areas result in a multiple wavelength emission from the same wafer.

Keywords:

Metalorganic vapour phase epitaxy Optoelectronics Wavelength Wafer Quantum well Materials science Wide-bandgap semiconductor Chemical vapor deposition Gallium nitride Optics Nanotechnology Physics Epitaxy Laser Layer (electronics)

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Multiple Wavelength Emission From Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD

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