JOURNAL ARTICLE

Surface morphological studies of green InGaN/GaN multi-quantum wells grown by using MOCVD

M. Senthil KumarY.S. LeeJ.Y. ParkS. J. ChungCH HongEun‐Kyung Suh

Year: 2008 Journal:   Materials Chemistry and Physics Vol: 113 (1)Pages: 192-195   Publisher: Elsevier BV
Keywords:
Trimethylindium Cathodoluminescence Metalorganic vapour phase epitaxy Materials science Indium Chemical vapor deposition Quantum well Optoelectronics Dislocation Barrier layer Scanning electron microscope Epitaxy Nanotechnology Layer (electronics) Composite material Optics Luminescence Laser

Metrics

25
Cited By
0.48
FWCI (Field Weighted Citation Impact)
14
Refs
0.66
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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