Surface morphological studies of green InGaN/GaN multi-quantum wells grown by using MOCVD

M. Senthil Kumar; Y.S. Lee; J.Y. Park; S. J. Chung; CH Hong; Eun‐Kyung Suh

doi:10.1016/j.matchemphys.2008.07.068

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Surface morphological studies of green InGaN/GaN multi-quantum wells grown by using MOCVD

M. Senthil Kumar Y.S. Lee J.Y. Park S. J. Chung CH Hong Eun‐Kyung Suh

Year: 2008 Journal: Materials Chemistry and Physics Vol: 113 (1)Pages: 192-195 Publisher: Elsevier BV

DOI: 10.1016/j.matchemphys.2008.07.068

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Keywords:

Trimethylindium Cathodoluminescence Metalorganic vapour phase epitaxy Materials science Indium Chemical vapor deposition Quantum well Optoelectronics Dislocation Barrier layer Scanning electron microscope Epitaxy Nanotechnology Layer (electronics) Composite material Optics Luminescence Laser

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Surface morphological studies of green InGaN/GaN multi-quantum wells grown by using MOCVD

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