Electroluminescence from Si/SiO 2 films deposited on p-Si substrates
Abstract
The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique,It has a very good rectifying behaviour.Visible electroluminescence(EL)has been observed from the Au/Si/SiO2/p-Si structure at a forward bias of 5V or larger,A broad band with one peak around 650-660nm appears is all the EL spectra of the structure.The effects of the thickness of the Si layer in the SI/SiO2 films and of the input electrical power on EL spectra are studied systematically.
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