Electroluminescence from Au/Si/SiO2/p-Si structure

Abstract

Si/SiO2 films have been grown using the two-target alternation magnetron sputtering technique. The thickness of the SiO2 layer in all the films was 8 rim and that of the Si layer in five types of the films ranged from 4 to 20 nm in steps of 4 nm. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structures at a forward bias of 5 V or larger. A broad band with one peak similar to650 660 nm appears in all the EL spectra of the structures. The effects of the thickness of the Si layer in the Si/SiO2 films and of input electrical power on the EL spectra are studied systematically, (C) 2002 Elsevier Science Ltd. All rights reserved.