Electroluminescence from Si/SiO ₂ films deposited on p-Si substrates

Abstract

The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a very good rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structure at a forward bias of 5V or larger. A broad band with one peak around 650-660 nm appears in all the EL spectra of the structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on EL spectra are studied systematically.