III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

F. Ren; M. Hong; J. M. Kuo; W. S. Hobson; J. R. Lothian; H.S. Tsai; Jun Lin; J. P. Mannáerts; J. Kwo; S. N. G. Chu; Y.K. Chen; A.Y. Cho

doi:10.1109/gaas.1997.628229

JOURNAL ARTICLE

III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

F. Ren M. Hong J. M. Kuo W. S. Hobson J. R. Lothian H.S. Tsai Jun Lin J. P. Mannáerts J. Kwo S. N. G. Chu Y.K. Chen A.Y. Cho

Year: 2002 Pages: 18-21

DOI: 10.1109/gaas.1997.628229

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Abstract

We report a III-V based metal oxide semiconductor field effect transistor (MOSFET) technology using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate insulator. Enhancement-mode p- and n-channel, depletion-mode n-channel GaAs MOSFETs, and enhancement-mode n-channel In/sub 0.53/Ga/sub 0.47/As MOSFETs were demonstrated.

Keywords:

MOSFET Materials science Dielectric Gate dielectric Optoelectronics Field-effect transistor Transistor Semiconductor Electrical engineering Voltage Engineering

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

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