Ga2O3 MOSFET Device with Al2O3 Gate Dielectric

Lv Yuanjie; Song Xubo; Ze-Zhao He; Tan Xin; Xingye Zhou; Wang Yuangang; Gu Guodong; Feng Zhihong

doi:10.15541/jim20170528

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Ga₂O₃ MOSFET Device with Al₂O₃ Gate Dielectric

Lv Yuanjie Song Xubo Ze-Zhao He Tan Xin Xingye Zhou Wang Yuangang Gu Guodong Feng Zhihong

Year: 2018 Journal: Journal of Inorganic Materials Vol: 33 (9)Pages: 976-976 Publisher: Science Press

DOI: 10.15541/jim20170528

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Abstract

基于 Al 2 O 3 介质的 Ga 2 O 3 MOSFET 器件制备研究吕元杰, 宋旭波, 何泽召, 谭鑫, 周幸叶, 王元刚, 顾国栋, 冯志红 (河北半导体研究所, 专用集成电路国家级重点实验室,

Keywords:

Materials science MOSFET Gate dielectric Dielectric Optoelectronics High-κ dielectric Engineering physics Electrical engineering Transistor Voltage

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga₂O₃ MOSFET Device with Al₂O₃ Gate Dielectric

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