Advances in GaAs Mosfet's Using Ga2O3(Gd2O3) as Gate Oxide

Y. C. Wang; M. Hong; J. M. Kuo; J. P. Mannáerts; J. Kwo; H.S. Tsai; J. J. Krajewski; J. S. Weiner; Y. K. Chen; A. Y. Cho

doi:10.1557/proc-573-219

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Advances in GaAs Mosfet's Using Ga₂O₃(Gd₂O₃) as Gate Oxide

Y. C. Wang M. Hong J. M. Kuo J. P. Mannáerts J. Kwo H.S. Tsai J. J. Krajewski J. S. Weiner Y. K. Chen A. Y. Cho

Year: 1999 Journal: MRS Proceedings Vol: 573 Publisher: Cambridge University Press

DOI: 10.1557/proc-573-219

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Keywords:

Materials science Transconductance MOSFET Optoelectronics Oxide Dielectric Gate oxide Hysteresis Threshold voltage Gate dielectric Electrical engineering Condensed matter physics Voltage Transistor Physics

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advances in GaAs Mosfet's Using Ga₂O₃(Gd₂O₃) as Gate Oxide

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