Energy Band Offsets at a Ga2O3(Gd2O3)-GaAs Interface

T. S. Lay; M. Hong; J. Kwo; J. P. Mannáerts; W. H. Hung; D. J. Huang

doi:10.1557/proc-573-131

ScienceGate Book Chapters

JOURNAL ARTICLE

Energy Band Offsets at a Ga₂O₃(Gd₂O₃)-GaAs Interface

T. S. Lay M. Hong J. Kwo J. P. Mannáerts W. H. Hung D. J. Huang

Year: 1999 Journal: MRS Proceedings Vol: 573 Publisher: Cambridge University Press

DOI: 10.1557/proc-573-131

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Conduction band Band offset Valence band Photoemission spectroscopy Analytical Chemistry (journal) Quantum tunnelling Effective mass (spring–mass system) Electron Condensed matter physics Band gap Optoelectronics Nuclear magnetic resonance X-ray photoelectron spectroscopy Physics Chemistry

Metrics

Cited By

0.79

FWCI (Field Weighted Citation Impact)

Refs

0.71

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Energy Band Offsets at a Ga₂O₃(Gd₂O₃)-GaAs Interface

Metrics

Topics

Related Documents

Ga ₂ O ₃ (Gd ₂ O ₃ )/GaAspower MOSFETs

Ga₂O₃(Gd₂O₃) as a dielectric insulator for GaAs device applications

Advances in GaAs Mosfet's Using Ga₂O₃(Gd₂O₃) as Gate Oxide

GaAs MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

Al₂O₃/Ga₂O₃(Gd₂O₃) passivation on In_0.20Ga_0.80As/GaAs—structural intactness with high-temperature annealing

Energy Band Offsets at a Ga2O3(Gd2O3)-GaAs Interface

Metrics

Topics

Related Documents

Ga 2 O 3 (Gd 2 O 3 )/GaAspower MOSFETs

Ga2O3(Gd2O3) as a dielectric insulator for GaAs device applications

Advances in GaAs Mosfet's Using Ga2O3(Gd2O3) as Gate Oxide

GaAs MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs—structural intactness with high-temperature annealing

Energy Band Offsets at a Ga₂O₃(Gd₂O₃)-GaAs Interface

Ga ₂ O ₃ (Gd ₂ O ₃ )/GaAspower MOSFETs

Ga₂O₃(Gd₂O₃) as a dielectric insulator for GaAs device applications

Advances in GaAs Mosfet's Using Ga₂O₃(Gd₂O₃) as Gate Oxide

Al₂O₃/Ga₂O₃(Gd₂O₃) passivation on In_0.20Ga_0.80As/GaAs—structural intactness with high-temperature annealing