Metal Oxide Resistive Switching Memory

Shimeng Yu; Byoungil Lee; H.‐S. Philip Wong

doi:10.1007/978-1-4419-9931-3_13

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Metal Oxide Resistive Switching Memory

Shimeng Yu Byoungil Lee H.‐S. Philip Wong

Year: 2011 Springer series in materials science Pages: 303-335 Publisher: Springer Science+Business Media

DOI: 10.1007/978-1-4419-9931-3_13

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Keywords:

Resistive random-access memory Oxide Scalability Materials science Non-volatile memory Crossbar switch Reliability (semiconductor) Nanotechnology Optoelectronics Fast switching Electrical engineering Electronic engineering Computer science Power (physics) Engineering Voltage Physics

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Topics

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Metal Oxide Resistive Switching Memory

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