Rapid thermal annealing of in situ p-doped polycrystalline silicon thin-films

Waqar Ahmed; Amir Muhammad Afzal

doi:10.1023/a:1004707605012

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Rapid thermal annealing of in situ p-doped polycrystalline silicon thin-films

Waqar Ahmed Amir Muhammad Afzal

Year: 1999 Journal: Journal of Materials Science Vol: 34 (20)Pages: 4955-4958 Publisher: Springer Science+Business Media

DOI: 10.1023/a:1004707605012

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Keywords:

Materials science Polycrystalline silicon Microelectronics Annealing (glass) Sheet resistance Silicon Chemical vapor deposition Dopant Doping Electrical resistivity and conductivity Crystallite Optoelectronics Dopant Activation Composite material Metallurgy Electrical engineering Thin-film transistor

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Rapid thermal annealing of in situ p-doped polycrystalline silicon thin-films

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