REDUCED OXIDATION STATES AND RADIATION-INDUCED TRAP GENERATION AT Si/SiO2 INTERFACE

F. J. Grunthaner; B. Lewis; R. P. Vasquez; J. Maserjian; A. Madhukar

doi:10.1016/b978-0-08-025969-7.50060-9

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REDUCED OXIDATION STATES AND RADIATION-INDUCED TRAP GENERATION AT Si/SiO2 INTERFACE

F. J. Grunthaner B. Lewis R. P. Vasquez J. Maserjian A. Madhukar

Year: 1980 Elsevier eBooks Pages: 290-295 Publisher: Elsevier BV

DOI: 10.1016/b978-0-08-025969-7.50060-9

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Keywords:

X-ray photoelectron spectroscopy Oxide Thermal oxidation Materials science Irradiation Electron Penning trap Radiation Layer (electronics) Silicon In situ Analytical Chemistry (journal) Atomic physics Optoelectronics Chemistry Nanotechnology Chemical engineering Optics Physics

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

REDUCED OXIDATION STATES AND RADIATION-INDUCED TRAP GENERATION AT Si/SiO2 INTERFACE

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