Interface-trap generation induced by hot-hole injection at the Si-SiO2 interface

Abstract

The individual role of hot holes, hot electrons, and their recombination in interface-trap generation at the Si-SiO2 interface during hot-carrier injection has been investigated with an emphasis on its oxide thickness dependence (7–30 nm). Hot holes are found to be able to generate interface traps and to be much more effective for interface-trap generation at low-level injections than both hot electrons and electron-hole recombination. The experimental evidence of no thickness dependence of the hot-hole-induced interface-trap generation suggests that this is an interfacial process occurring at the Si-SiO2 interface.