Fabrication and Characterization of Silicon Oxynitride Thin Films

Abstract

In this paper we report fabrication and characterization of silicon oxynitride thin films. Thin films have been deposited by means of DC magnetron sputtering system, by use of pure silicon 99.99%. All of the deposition parameters were constant except value of oxygen (as the active gas) and argon (as the inert gas). Four samples have been deposited with different values of gases. Finding a relation between the value of used gases and thin films properties has been investigated. Spectrophotometry and atomic force microscopy have been used to do so.