Memristive Dendritic\nDevice with a Chemical Vapor-Deposited\nMonolayer MoS₂ Film

Abstract

The discovery of graphene in the early 2000s led to the\nrapid development\nof an emerging class of material system, now widely known as two-dimensional\n(2D) materials. The atomic-scale thickness of 2D materials leads to\nrich transport physics beneficial for many electronic/optoelectronic\ndevices. 2D transition-metal dichalcogenides (2D-TMDCs) have been\nwidely investigated in logic applications over the past decade. However,\nout-of-plane transport in ultrathin 2D-TMDCs and the resulting applications\nin memristive devices remain relatively less explored. Challenges\nremain in large-area growth, as well as in the fundamental understanding\nof resistance switching in 2D-TMDC films. In this work, we report\na systematic investigation of resistive switching in monolayer (1L)\nMoS₂ films. We demonstrate large-area growth of chemical\nvapor-deposited (CVD) 1L-MoS₂ films. Two-terminal cross-point\ndevices are fabricated with 1L MoS₂ as the active material.\nDifferent switching mechanisms emerge in the fabricated Au/Ti/1L-MoS₂/Au/Cr devices depending on the operating conditions. We observe\na partially volatile mode of operation that can be used to mimic the\ndynamics of a dendritic junction in a biological neuron. While dendritic\njunctions are generally ignored in machine learning, they play a crucial\nrole in biological networks through signal filtering and integration.\nThis, in turn, leads to enhanced energy efficiency. By demonstrating\nMoS₂-based dendritic memristive devices, we envisage the\ndevelopment of more efficient and bioinspired neural networks.