Large-Domain\nMonolayer MoS₂ Synthesis via\nLocal-Feeding Metalorganic Chemical Vapor Deposition

Abstract

Two-dimensional (2D) transition metal dichalcogenides\n(TMDs) such\nas MoS₂, capable of forming stable monolayers that are\nonly three-atoms thick, have exhibited remarkable properties for next-generation\nelectronic and optoelectronic applications. The realization of these\n2D material-based technologies requires the development of scalable\nsynthesis methods, among which metalorganic chemical vapor deposition\n(MOCVD) has emerged as a viable route. Nevertheless, current MOCVD\nprocesses confront challenges associated with small domain sizes typically\nin the submicrometer range, leading to dense grain boundary defects\nthat compromise the crystal quality of the MoS₂ films.\nWe herein present the MOCVD growth of large-size and single-crystal\nMoS₂ monolayers using a quartz nozzle-guided precursor\ndelivery approach. This growth method substantially reduces the nucleation\ndensity, enabling the formation of record-large MoS₂ crystals\n(>300 μm) among all MOCVD results. Our work demonstrates\nthat\nlarge-domain growth is compatible with the high-reactivity metalorganic\nprecursors, on the condition that the growth dynamics are deliberately\nengineered.