Epitaxial\n2D SnSe<sub>2</sub>/ 2D WSe<sub>2</sub> van\nder Waals Heterostructures
KleopatraEmmanouil Aretouli (3074721)Dimitra Tsoutsou (1418689)Polychronis Tsipas (1418704)Jose Marquez-Velasco (1418698)Sigiava Aminalragia Giamini (1418686)Nicolaos Kelaidis (3074718)Vassilis Psycharis (1492885)Athanasios Dimoulas (1418701)
Abstract
van\nder Waals heterostructures of 2D semiconductor materials can\nbe used to realize a number of (opto)electronic devices including\ntunneling field effect devices (TFETs). It is shown in this work that\nhigh quality SnSe<sub>2</sub>/WSe<sub>2</sub> vdW heterostructure\ncan be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates\nusing a Bi<sub>2</sub>Se<sub>3</sub> buffer layer. A valence band\noffset of 0.8 eV matches the energy gap of SnSe<sub>2</sub> in such\na way that the VB edge of WSe<sub>2</sub> and the CB edge of SnSe<sub>2</sub> are lined up, making this materials combination suitable\nfor (nearly) broken gap TFETs.
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