Epitaxial\n2D MoSe<sub>2</sub> (HfSe<sub>2</sub>) Semiconductor/2D TaSe<sub>2</sub> Metal van der Waals Heterostructures
Dimitra Tsoutsou (1418689)KleopatraE. Aretouli (1418695)Polychronis Tsipas (1418704)Jose Marquez-Velasco (1418698)Evangelia Xenogiannopoulou (1418692)Nikolaos Kelaidis (1418683)Sigiava Aminalragia Giamini (1418686)Athanasios Dimoulas (1418701)
Abstract
Molecular beam epitaxy of 2D metal\nTaSe<sub>2</sub>/2D MoSe<sub>2</sub> (HfSe<sub>2</sub>) semiconductor\nheterostructures on epi-AlN(0001)/Si(111) substrates is reported.\nElectron diffraction reveals an in-plane orientation indicative of\nvan der Waals epitaxy, whereas electronic band imaging supported by\nfirst-principles calculations and X-ray photoelectron spectroscopy\nindicate the presence of a dominant trigonal prismatic 2H-TaSe<sub>2</sub> phase and a minor contribution from octahedrally coordinated\nTaSe<sub>2</sub>, which is present in TaSe<sub>2</sub>/AlN and TaSe<sub>2</sub>/HfSe<sub>2</sub>/AlN but notably absent in the TaSe<sub>2</sub>/MoSe<sub>2</sub>/AlN, indicating superior structural quality of\nTaSe<sub>2</sub> grown on MoSe<sub>2</sub>. Apart from its structural\nand chemical compatibility with the selenide semiconductors, TaSe<sub>2</sub> has a workfunction of 5.5 eV as measured by ultraviolet photoelectron\nspectroscopy, which matches very well with the semiconductor workfunctions,\nimplying that epi-TaSe<sub>2</sub> can be used for low-resistivity\ncontacts to MoSe<sub>2</sub> and HfSe<sub>2</sub>.
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