Sb₂Se₃ Microbelt/PEDOT Heterojunctionfor a Self-Powered Visible to Near-Infrared Photodetector with HighPolarization-Sensitive Imaging

Abstract

Self-powered polarization-sensitive photodetectors play an important role in considerable fields such as navigation, military reconnaissance, and medical imaging. In this paper, a Sb₂Se₃/PEDOT heterojunction was developed by spraying a PEDOT film to a single Sb₂Se₃ microbelt (MB) with high crystallinity, synthesized using the CVD process. The self-powered Sb₂Se₃/PEDOT photodetector (PD) exhibits high polarization-sensitive and broadband detection in the visible–near-infrared range (368–1300 nm). The device achieves a high on/off ratio of 1804, maximum responsivity and specific detectivity of 2.33 A W^–1 and 3.84 × 10¹² Jones, and fast response time (23 ms/60 ms) at 724 nm under zero bias. The Sb₂Se₃/PEDOT PD exhibits excellent polarization sensitivity characteristics with the highest anisotropy ratio of 1.7 under 724 nm at zero bias, which is 1.13 times higher compared to the Sb₂Se₃ PD (1.32) at 0.2 V. The enhanced ability to detect polarized light of the Sb₂Se₃/PEDOT PD can be attributed to inherent anisotropy of the Sb₂Se₃ MB and good polarization-sensitivity of PEDOT to form a type II heterojunction, which is suitable for fast separation of photogenerated carriers. Excellent imaging capabilities of the letters “JN” and sensitivity to polarized light at 724 nm have been established for the high-resolution single-pixel image sensor at 0 V bias. This work demonstrates an effective strategy for high-optical response, self-powered, polarization-sensitive photodetection, and imaging using Sb₂Se₃/PEDOT heterojunctions.