JOURNAL ARTICLE

Sb2Se3 microwires/ZnO nanoparticles heterojunction for high performances self-powered photodetector

Abstract

Abstract Self-powered photodetectors play a crucial role in technology, garnering attention for their diverse applications. However, most current models face challenges such as reliance on external power, complex fabrication, and inconvenient usability. Sb2Se3 presents a promising solution for p-type semiconductors in photovoltaic cells, owing to ideal bandgap and excellent light absorption. In this study, Sb2Se3 microwires (MWs) synthesized by hydrothermal method was modified with ZnO nanoparticles (NP) to create the Sb2Se3-MW/ZnO NP heterostructure, designed to build a highly efficient photodetector featuring interdigitated electrodes. The Sb2Se3-MW/ZnO NP device exhibits self-powered characteristics and strong photoresponse from 350 to 1000 nm, achieving a photoresponsivity of 120 mA W-1 at 368 nm (1.21 mW cm-2), an on/off ratio of 257, and a peak detection rate of 8.93×1011 Jones. This innovative heterostructure significantly broadens the light response range, proving that the Sb2Se3-MW/ZnO-NP heterojunction is a major step toward high-performance, self-powered optoelectronic devices.

Keywords:
Materials science Heterojunction Photodetector Optoelectronics Fabrication Semiconductor Nanoparticle Absorption (acoustics) Nanotechnology Band gap

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