Chemical Vapor Deposition\nof NbS<sub>2</sub> from\na Chloride Source with H<sub>2</sub> Flow: Orientation Control of\nUltrathin Crystals Directly Grown on SiO<sub>2</sub>/Si Substrate\nand Charge Density Wave Transition
Takashi Yanase (2862962)Sho Watanabe (728293)Mengting Weng (1709221)Makoto Wakeshima (1507057)Yukio Hinatsu (1483456)Taro Nagahama (2862965)Toshihiro Shimada (2862968)
Abstract
This article reports\nthe growth and characterization of <i>c</i>-axis-oriented\nNbS<sub>2</sub> thin films on SiO<sub>2</sub>/Si substrate by ambient\npressure chemical vapor deposition (CVD)\nusing a generic metal chloride source. We found that NbS<sub>2</sub> nanosheets can be grown directly on the SiO<sub>2</sub>/Si substrate\nwith the aid of hydrogen gas mixed in the carrier gas. Detailed examination\nof the growth parameters was made possible using a separate-flow CVD\napparatus. It appears that the major cause of the misorientation is\nthe off-stoichiometry with surplus Nb. The quality of the films was\nevaluated by X-ray diffraction and Raman spectroscopy as well as resistivity\nmeasurements at low temperatures. They showed a resistivity minimum\nat the same temperature of the charge density wave (CDW) transition\nfor a bulk single crystal of 3R-NbS<sub>2</sub>.
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