Resistive Switching of the Tetraindolyl Derivative\nin Ultrathin Films: A Potential Candidate for Nonvolatile Memory Applications

Abstract

Bipolar\nresistive switching using organic molecule is very promising\nfor memory applications owing to their advantages, such as simple\ndevice structure, low manufacturing cost, stability, and flexibility.\nHerein we report Langmuir–Blodgett (LB) and spin-coated-film-based\nbipolar resistive switching devices using organic material 1,4-bis­(di­(1<i>H</i>-indol-3-yl)­methyl)­benzene (Indole1). The pressure–area\nper molecule isotherm (π–<i>A</i>), Brewster\nangle microscopy (BAM), atomic force microscopy (AFM), and scanning\nelectron microscopy (SEM) were used to formulate an idea about the\norganization and morphology of the organic material onto thin films.\nOn the basis of the device structure and measurement protocol, it\nis observed that the device made up of Indole1 shows nonvolatile resistive\nrandom access memory (RRAM) behavior with a very high memory window\n(∼10⁶), data sustainability (5400 s), device yield\n(86.7%), and repeatability. The oxidation–reduction process\nand electric-field-driven conduction are the keys behind such switching\nbehavior. Because of very good data retention, repeatability, stability,\nand a high device yield, the switching device designed using compound\nIndole1 may be a potential candidate for memory applications.