Unipolar resistive switching behavior in Dy2O3 films for nonvolatile memory applications

Jim-Long Her; Tung-Ming Pan; Chih-Hung Lu

doi:10.1016/j.tsf.2012.04.045

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Unipolar resistive switching behavior in Dy2O3 films for nonvolatile memory applications

Jim-Long Her Tung-Ming Pan Chih-Hung Lu

Year: 2012 Journal: Thin Solid Films Vol: 520 (17)Pages: 5706-5709 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2012.04.045

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Keywords:

Non-volatile memory Materials science Optoelectronics Resistive touchscreen Resistive random-access memory Thin film Nanotechnology Electrical engineering Voltage Engineering

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Unipolar resistive switching behavior in Dy2O3 films for nonvolatile memory applications

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