Quantitative photomodulated thermoreflectance studies of germanium and silicon semiconductors

R.E. Wagner; A. Mandelis

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Quantitative photomodulated thermoreflectance studies of germanium and silicon semiconductors

R.E. Wagner A. Mandelis

Year: 1994 Journal: Springer Link (Chiba Institute of Technology) Publisher: Chiba Institute of Technology

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Abstract

The frequency response of the photomodulated thermoreflectance (PMTR) signal has been used to characterize various semiconductor samples, including crystalline Ge/Si, ion-implanted Ge, and amorphous Si. Theoretical modelling has allowed the deconvolution of electron-hole plasma- and thermal-wave contributions to the signal throughout the entire frequency range.

Keywords:

Deconvolution Germanium Silicon SIGNAL (programming language) Semiconductor Semiconductor materials Amorphous silicon

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Thermography and Photoacoustic Techniques

Physical Sciences → Engineering → Mechanics of Materials

Thermal properties of materials

Physical Sciences → Materials Science → Materials Chemistry

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantitative photomodulated thermoreflectance studies of germanium and silicon semiconductors

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