PLASMA DEPOSITION OF SILICON NITRIDE

Abstract

This paper reports on the preparation and characterization of thin films of silicon nitride deposited on heated silicon substrates from Si (CH3)4-NH3-H2 mixtures activated at room temperature by an a.c. discharge at low frequency. The films were deposited at 800°C. Deposition rate as well as refractive index were measured and several parameters were systematically varied, including deposition time (1-3 h), total gas flow rate, chamber pressure (20-45 kPa), peak driving voltage (8-12 kV) and frequency (400-600Hz). The composition of the films was studied using transmission electron microscopy (106 V), Auger spectroscopy and infrared spectroscopy.