Exploring Double NDR Modulation and UV‐NIR Photodetection in MoS ₂ /Sb ₂ Se ₃ Heterostructures

Abstract

Abstract Negative differential resistance (NDR) in van der Waals heterostructures holds significant potential for high‐frequency electronics and logic circuits. This study explores the NDR behavior of n‐type MoS 2 /p‐type Sb 2 Se 3 heterostructures. Bulk Sb 2 Se 3 flakes are mechanically exfoliated, exhibiting quasi‐1D characteristics due to their anisotropic structure, while MoS 2 is synthesized via chemical vapor deposition (CVD) to ensure high crystallinity and uniform layer thickness. The MoS 2 /Sb 2 Se 3 heterojunction demonstrates a pronounced rectifying behavior alongside two distinct NDR peaks at room temperature. The first NDR peak (NDR‐1) originates from band‐to‐band tunneling (BTBT), whereas the second peak (NDR‐2) emerges under laser illumination and is attributed to trap states, intrinsic defects, and carrier recombination dynamics rather than tunneling mechanisms. The application of gate voltage further modulates the NDR characteristics, revealing the intricate interplay between external fields and tunneling mechanisms. Additionally, laser modulation effectively shifts and enhances the NDR peak, highlighting the device's broad spectral sensitivity from ultraviolet (UV) to near‐infrared (NIR) wavelengths. These results demonstrate the viability of MoS 2 /Sb 2 Se 3 heterostructures for tunable electronic and optoelectronic devices, such as photodetectors and high‐speed reconfigurable circuits, where NDR, laser modulation, and gate control play a crucial role in performance optimization.