Self-Powered Broadband Photodetection of MoS₂/Sb₂Se₃ Heterostructure

Abstract

Achieving broadband self-powered photoresponse by a single device remains a top priority in the scientific community. Van der Waals (vdW) heterostructures, a lattice-matched structure, have great potential for self-powered broadband optoelectronic devices. Herein, a MoS2/Sb2Se3 heterostructure broadband photodetector is proposed, which can work in spectral range visible (Vis) to infrared–B (IR–B). The built device exhibited a strong built-in potential, resulting in the device displaying excellent responsivity 42 mAW–1, 125 mAW–1, and 60 mAW–1 for Vis (532 nm), IR–A (1064 nm), and IR–B (1405 nm) light illumination, respectively, under self-powered mode at room temperature. Moreover, the performance of the photodetector is also supported by the technology computer-aided design (TCAD) simulation insights. In addition, the fabricated vdW heterostructure-based device exhibited a stable response at high-temperature (125 °C) conditions and displayed peak responsivity 116 mAW–1 for the IR–A illumination. The fabricated detector is also tested in photoconductive mode, where the computed value of peak state-of-art metrics are responsivity (1.3 × 104 mAW–1), detectivity (3.89 × 1010 Jones), and quantum efficiency (1.5 × 103%) at 0.8 V bias and a weak 5 μW optical power. Along with this, the device is able to detect a very faint optical signal of ∼300 femto-watt. Hence, the proposed MoS2/Sb2Se3 van der Waals heterostructure-based device provides an enforceable pathway toward achieving self-powered technology, opening avenues for its application across a broad spectrum of optoelectronics.