Quantum Dot Channel Field-Effect Transistor Based on the Engineered Width of an Armchair Graphene Nanoribbon

Mehran Vali

doi:10.1007/s11664-025-12185-y

ScienceGate Book Chapters

JOURNAL ARTICLE

Quantum Dot Channel Field-Effect Transistor Based on the Engineered Width of an Armchair Graphene Nanoribbon

Mehran Vali

Year: 2025 Journal: Journal of Electronic Materials Vol: 54 (9)Pages: 7821-7827 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-025-12185-y

Get Full-Text PDF Get Analytical Report

Keywords:

Field-effect transistor Graphene Quantum dot Solid-state physics Channel (broadcasting) Materials science Field (mathematics) Condensed matter physics Transistor Graphene quantum dot Nanotechnology Physics Quantum mechanics Electrical engineering Engineering Mathematics Voltage

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.18

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Quantum-Dot Cellular Automata

Physical Sciences → Computer Science → Computational Theory and Mathematics

Graphene and Nanomaterials Applications

Physical Sciences → Engineering → Biomedical Engineering

Quantum Dot Channel Field-Effect Transistor Based on the Engineered Width of an Armchair Graphene Nanoribbon

Metrics

Topics

Related Documents

Performance evaluation of dual-channel armchair graphene nanoribbon field-effect transistor

Quantum capacitance in Armchair Graphene nanoribbon considering edge effect for different channel width

Locally Defect-Engineered Graphene Nanoribbon Field-Effect Transistor

Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model

Channel Length Modulation Effect On Monolayer Graphene Nanoribbon Field Effect Transistor